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MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
FS30ASH-06
OUTLINE DRAWING
6.5 5.0 0.2
Dimensions in mm
r
5.5 0.2
1.5 0.2
0.5 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
2.5V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) .............................................................. 30m ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 65ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 10 30 120 30 30 120 35 -55 ~ +150 -55 ~ +150 0.26
Unit V V A A A A A W C C g
Feb.1999
L = 100H
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 25 30 0.38 34 2000 320 170 33 135 145 150 1.0 -- 65 Max. -- 0.1 0.1 1.2 30 39 0.45 -- -- -- -- -- -- -- -- 1.5 3.57 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, ID = 15A, VGS = 4V, RGEN = RGS = 50
IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
tw = 10ms
40
30
100ms 1ms 10ms
20
10
0
0
50
100
150
200
100 7 TC = 25C DC 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 5V 4V 3V 2.5V TC = 25C Pulse Test PD = 35W
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 5V 4V 3.5V 3V
DRAIN CURRENT ID (A)
40
DRAIN CURRENT ID (A)
TC = 25C Pulse Test 2.5V
16
2V
30
12
20
2V PD = 35W
8
10
4
1.5V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
TC = 25C Pulse Test ID = 50A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50
VGS = 2.5V
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
1.6
40
1.2
30A
30
4V
0.8
20
0.4
10A
10
TC = 25C Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
TC = 25C 75C 125C VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
30
20
10
FORWARD TRANSFER ADMITTANCE yfs (S)
40
0
0
1.0
2.0
3.0
4.0
5.0
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25C 2 f = 1MHZ
VGS = 0V
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
td(off) tf tr TCh = 25C VDD = 30V VGS = 4V RGEN = RGS = 50
Coss
Crss
SWITCHING TIME (ns)
Ciss
CAPACITANCE Ciss, Coss, Crss (pF)
td(on)
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
5.0
Tch = 25C ID = 30A
4.0
SOURCE CURRENT IS (A)
VDS = 10V
40
3.0
20V 40V
30
TC = 125C
2.0
20
75C 25C
1.0
10
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 100 7 0.1 5 3 2 10-1 7 5 3 2
0.2
1.2
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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